View AOD3N50_4304733.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AOD3N50 3A, 500V N-Channel MOSFET
General Description
The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Features
VDS (V) = 600V @ 150C ID = 2.8A RDS(ON) < 3 (VGS = 10V) 100% UIS Tested! 100% R g Tested!
TO-252 D-PAK Top View Bottom View D
D
G
S
S
G
G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current
C C
Maximium 500 30 2.8 1.8 9.0 2.0 60 120 5 57 0.45 -50 to 150 300
Units V V A A mJ mJ V/ns W W/ C C C
o
TC=25C TC=100C ID IDM IAR EAR
H
Repetitive avalanche energy C Single pulsed avalanche energy Peak diode recovery dv/dt TC=25C B Power Dissipation Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Case-to-Sink Maximum Junction-to-Case D,F
A A,G
EAS dv/dt PD TJ, TSTG TL Symbol RJA RCS RJC Typical 45 1.8
Maximum 55 0.5 2.2
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD3N50
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS BVDSS /TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Conditions ID=250A, VGS=0V, TJ=25C ID=250A, VGS=0V, TJ=125C ID=250A, VGS=0V VDS=500V, VGS=0V VDS=400V, TJ=125C VDS=0V, VGS=30V VDS=5V, ID=250A VGS=10V, ID=1.5A VDS=40V, ID=1.5A 3.5 4.1 2.3 2.8 0.78 1 3 9 221 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 25 2.1 1.9 276 31.4 2.6 3.9 6.7 VGS=10V, VDS=400V, ID=3A 1.7 2.7 11 VGS=10V, VDS=250V, ID=3A, RG=25 IF=3A,dI/dt=100A/s,VDS=100V 19 20.5 15 134 0.89 331 38 3.0 5.9 8.0 2.0 3.2 13.2 23.0 24.6 18.0 161 1.1 Min 500 600 0.54 1 10 100 4.7 3 Typ Max Units V V V/ C A nA V S V A A pF pF pF nC nC nC ns ns ns ns ns C
o
Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/s,VDS=100V
A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=150C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. H. L=60mH, IAS=2A, VDD=50V, RG=10, Starting TJ=25C Rev1: Dec. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKE-50
to 175
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD3N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6.0 5.0 4.0 ID (A) 3.0 6V 2.0 VGS=5.5V 1.0 0.0 0 5 10 15 20 25 30 VDS (Volts) Fig 1: On-Region Characteristics 5.0 0.1 2 4 6 8 10 ID(A) 1 125C 25C 10V 6.5V 10 VDS=40V -55C
VGS(Volts) Figure 2: Transfer Characteristics 3.0 Normalized On-Resistance 2.5 2.0 1.5 1.0 0.5 0.0 -100 VGS=10V ID=1.5A
4.0 RDS(ON) () VGS=10V 3.0
2.0
1.0 0 1 2 3 4 5 6 7 -50 0 50 100 150 200
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
1.0E+02 1.0E+01
BVDSS (Normalized)
1.1 1.0E+00 IS (A) 1 1.0E-01
125C
1.0E-02 -50 to 175 0.9 1.0E-03 0.8 -100 1.0E-04 -50 0 50
o
25C
100
150
200
0.2
0.4
0.6
0.8
1.0
TJ ( C) Figure 5: Break Down vs. Junction Temperature
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD3N50
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 VDS=400V ID=3A Capacitance (pF) 100 1000 Ciss
12
VGS (Volts)
9
Coss
6
10 Crss 1
3
0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 10.0
0
10 VDS (Volts) Figure 8: Capacitance Characteristics
1
100
800
RDS(ON) limited 10s 100s 1ms DC 10ms 0.1s
TJ(Max)=150C TA=25C
600
Power (W)
ID (Amps)
1.0
400
0.1
TJ(Max)=150C TC=25C
200
0.0 1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 100 1000
0 0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)
D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=2.2C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
-50 to 175
Single Pulse
PD Ton
T 10 100
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD3N50
60 50 40 30 20 10 0 0 25 50 75 100 125 150 TCASE (C) Figure 12: Power De-rating (Note B) Current rating ID(A)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note B)
Power Dissipation (W)
400 TJ(Max)=150C TA=25C
300 Power (W)
200
100
0 0.0001
0.001
0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G)
0.01
100
1000
10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJA=55C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01
PD
-50 to 175
0.1 1
Ton 10
T 100 1000
Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD3N50
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VD C
10V
DUT Vgs Ig
+
VDC
Vds
Qgs
Q gd
-
Charge
Res istive Switching Test Circuit & Waveforms
R L Vds Vds
Vgs Rg Vgs
DU T
+
VD C
90% Vdd 10% Vgs
t d(o n) tr t on
t d(off) t off tf
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DU T Vgs Vgs Vgs Vds EAR 1/2 LI =
2 AR
BVDSS
+
VDC
Vdd
-
Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs Qrr = - Idt
Vds Vgs Ig
Isd
L
Isd
IF
+
VD C
dI/dt IRM
trr
Vdd Vds
-
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

▲Up To Search▲

Price & Availability of AOD3N50

	To Download AOD3N50 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .